? semiconductor components industries, llc, 2007 may, 2007 - rev. 2 1 publication order number: nss12501uw3/d nss12501uw3t2g 12 v, 7.0 a, low v ce(sat) npn transistor on semiconductor's e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc-dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu's control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? this is a pb-free device maximum ratings (t a = 25 c) rating symbol max unit collector\emitter voltage v ceo 12 vdc collector\base voltage v cbo 12 vdc emitter\base voltage v ebo 6.0 vdc collector current - continuous i c 5.0 adc collector current - peak i cm 7.0 a electrostatic discharge esd hbm class 3b mm class c thermal characteristics characteristic symbol max unit total device dissipation, t a = 25 c derate above 25 c p d (note 1) 875 7.0 mw mw/ c thermal resistance, junction-to-ambient r ja (note 1) 143 c/w total device dissipation, t a = 25 c derate above 25 c p d (note 2) 1.5 11.8 w mw/ c thermal resistance, junction-to-ambient r ja (note 2) 85 c/w thermal resistance, junction-to-lead #1 r jl (note 2) 23 c/w junction and storage temperature range t j , t stg -55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr-4 @ 100 mm 2 , 1 oz copper traces. 2. fr-4 @ 500 mm 2 , 1 oz copper traces. http://onsemi.com device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. wdfn3 case 506au nss12501uw3t2g wdfn3 (pb-free) 3000/ tape & reel 12 volts, 7.0 amps npn low v ce(sat) transistor equivalent r ds(on) 31 m 1 vf = specific device code m = date code = pb-free package vf m 1 marking diagram collector 3 1 base 2 emitter (note: microdot may be in either location) 2 3
nss12501uw3t2g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collector-emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 12 - - vdc collector-base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 12 - - vdc emitter-base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 - - vdc collector cutoff current (v cb = 12 vdc, i e = 0) i cbo - - 0.1 adc emitter cutoff current (v eb = 6.0 vdc) i ebo - - 0.1 adc on characteristics dc current gain (note 3) (i c = 10 ma, v ce = 2.0 v) (i c = 500 ma, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) (i c = 2.0 a, v ce = 2.0 v) (i c = 3.0 a, v ce = 2.0 v) h fe 200 200 200 200 200 - - 345 330 315 - - - - - collector-emitter saturation voltage (note 3) (i c = 0.1 a, i b = 0.010 a) (i c = 1.0 a, i b = 0.100 a) (i c = 1.0 a, i b = 0.010 a) (i c = 2.0 a, i b = 0.020 a) (i c = 3.0 a, i b = 0.030 a) (i c = 4.0 a, i b = 0.400 a) v ce(sat) - - - - - - 0.007 0.031 0.045 0.070 0.100 0.100 0.008 0.035 0.060 0.100 0.120 0.120 v base-emitter saturation voltage (note 3) (i c = 1.0 a, i b = 0.01 a) v be(sat) - 0.760 0.900 v base-emitter turn-on voltage (note 3) (i c = 2.0 a, v ce = 2.0 v) v be(on) - 0.730 0.900 v cutoff frequency (i c = 100 ma, v ce = 5.0 v, f = 100 mhz) f t 150 - - mhz input capacitance (v eb = 0.5 v, f = 1.0 mhz) cibo - 650 pf output capacitance (v cb = 3.0 v, f = 1.0 mhz) cobo - 120 pf switching characteristics delay (v cc = 10 v, i c = 750 ma, i b1 = 15 ma) t d - - 90 ns rise (v cc = 10 v, i c = 750 ma, i b1 = 15 ma) t r - - 100 ns storage (v cc = 10 v, i c = 750 ma, i b1 = 15 ma) t s - - 320 ns fall (v cc = 10 v, i c = 750 ma, i b1 = 15 ma) t f - - 100 ns 3. pulsed condition: pulse width = 300 sec, duty cycle 2%.
nss12501uw3t2g http://onsemi.com 3 150 c 25 c -55 c figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current 0.001 i c , collector current (a) 0.15 0.05 0 0.01 0.1 1.0 10 0.10 i c /i b = 10 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = 150 c 25 c -55 c 0.001 i c , collector current (a) 0.2 0.05 0 0.01 0.1 1.0 10 0.1 0.15 i c /i b = 100 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = -55 c 25 c 150 c figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current figure 5. base emitter turn-on voltage vs. collector current figure 6. saturation region i c , collector current (a) i c , collector current (a) 0.01 0.001 1.0 0.4 0.1 0.001 i c , collector current (a) 0.6 0.4 0.2 i b , base current (ma) 0.01 1.0 0.6 0.4 0.2 0 0.01 0.1 10 1.0 100 0.1 0.6 0.8 0.8 0.3 150 c 25 c -55 c 0.8 1.0 1.0 10 125 175 225 325 425 525 575 625 0.001 0.01 0.1 1 10 h fe , dc current gain 1.0 1.2 1.1 v be(sat) , base emitter saturation voltage (v) v be(on) , base emitter turn-on voltage (v) 10 v ce , collector-emitter voltage (v) i c = 500 ma 10 ma 100 ma 300 ma v ce = 2.0 v 275 375 475 150 c (5 v) 150 c (2 v) 25 c (5 v) 25 c (2 v) -55 c (5 v) -55 c (2 v) 0.3 0.5 0.7 0.9 0.5 0.7 0.9 i c /i b = 10
nss12501uw3t2g http://onsemi.com 4 v ce (v dc ) figure 7. input capacitance v eb , emitter base voltage (v) 0 675 475 425 375 275 3.0 1.0 2.0 325 625 575 525 5.0 4.0 6.0 0.01 0.1 1 10 0.01 1.0 10 100 c ibo (pf) c ibo , input capacitance (pf) figure 8. output capacitance v cb , collector base voltage (v) 0 120 110 100 80 70 3.0 1.0 2.0 90 140 130 5.0 4.0 10 c obo (pf) c obo , output capacitance (pf) figure 9. safe operating area 9.0 i c (a) 1.0 ms 10 ms 100 ms 1.0 s thermal limit 7.0 6.0 8.0 0.1 single pulse test at t amb = 25 c
nss12501uw3t2g http://onsemi.com 5 package dimensions wdfn3 case 506au-01 issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994 . 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. ???? ???? ???? ???? a d e b c 0.10 pin one 2 x reference 2 x top view side view bottom view a l (a3) d2 e2 c c 0.10 c 0.10 c 0.08 8 x a1 seating plane e 2x k note 3 b 3x 0.10 c 0.05 c a b b 1 2 3 dim a min nom max min millimeters 0.70 0.75 0.80 0.028 inches a1 0.00 0.05 0.000 a3 0.20 ref b 0.25 0.30 0.35 0.010 d 2.00 bsc d2 1.40 1.50 1.60 0.055 e 2.00 bsc e2 0.90 1.00 1.10 0.035 0.030 0.031 0.002 0.008 ref 0.012 0.014 0.079 bsc 0.059 0.063 0.079 bsc 0.039 0.043 nom max e 0.35 ref 0.014 ref k 1.30 bsc 0.051 bsc 0.35 0.40 0.45 0.014 0.016 0.018 l e/2 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.600 1.300 0.300 0.250 0.400 1.600 1.100 0.400 2x 0.275 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, represent ation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 nss12501uw3/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
